Title :
Dielectric properties of (Ba,Sr)TiO3 thin films with varied microstructures prepared by the chemical solution deposition method for thin-film capacitors and ferroelectric varactors
Author :
Kageyama, Keisuke ; Hosokura, Tadasu ; Nakaiso, Toshiyuki ; Takagi, Hiroshi
Author_Institution :
Murata Manuf. Co., Ltd., Nagaokakyo, Japan
fDate :
10/1/2010 12:00:00 AM
Abstract :
We prepared epitaxially grown three-axis-oriented (Ba0.7S0.3)TiO3 thin films on (100) platinum-coated (100) MgO single-crystal substrates by the chemical solution deposition method, using a solution derived from Ba(CH3COO)2, Sr(CH3COO)2, and Ti(O-i-C3H7)4. Microstructures of fabricated thin films depend strongly on the fabrication process, especially on the annealing condition. A (Ba,Sr)TiO3 thin film fabricated with an annealing temperature of 1073K was found to be a single crystal by transmission electron microscopy. The single-crystal (Ba,Sr)TiO3 thin film exhibited a (100) three-axis-orientation, which followed the (100) orientation of the platinum electrode on the MgO single-crystal substrate. A (100) three-axis-oriented (Ba,Sr)TiO3 thin film may be useful for preparing a thin-film capacitor.
Keywords :
annealing; barium compounds; crystal microstructure; dielectric thin films; electrodes; epitaxial growth; epitaxial layers; magnesium compounds; permittivity; platinum; strontium compounds; transmission electron microscopy; (100) platinum-coated (100) single-crystal substrates; (100) three-axis-orientation; (Ba0.7S0.3)TiO3; MgO-Pt; annealing; chemical solution deposition method; dielectric properties; epitaxially grown three-axis-oriented thin films; fabrication process; ferroelectric varactors; microstructures; platinum electrode; temperature 1073 K; thin-film capacitors; transmission electron microscopy; Annealing; Capacitors; Electrodes; Films; Microstructure; Permittivity; Substrates;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
DOI :
10.1109/TUFFC.2010.1678
