DocumentCode
1337735
Title
Defect control for polarization switching in BiFeO3 single crystals
Author
Chishima, Yuji ; Noguchi, Yuji ; Kitanaka, Yuuki ; Miyayama, Masaru
Author_Institution
Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Tokyo, Japan
Volume
57
Issue
10
fYear
2010
fDate
10/1/2010 12:00:00 AM
Firstpage
2233
Lastpage
2236
Abstract
BiFeO3 (BFO) single crystals were grown and the effects of Zn and Mn co-doping on the polarization and leakage current properties were investigated at 25°C for establishing materials design based on defect chemistry. Although Zn doping or Mn doping led to a deterioration in the properties, Zn-Mn co-doping led to a large remanent polarization (36 μC/cm2), a low coercive field (19 kV/cm), and a relatively low leakage current density (~10-8 A/cm2). It is proposed that defect dipoles composed of Zn2+ and Mn4+ act as effective nucleation sites for ferroelectric domains during polarization switching in BFO crystals.
Keywords
bismuth compounds; crystal defects; current density; dielectric polarisation; doping; electric domains; ferrites; ferroelectric materials; ferroelectric switching; leakage currents; manganese; multiferroics; zinc; BiFeO3:Mn; BiFeO3:Mn,Zn; BiFeO3:Zn; co-doping; defect chemistry; defect dipoles; ferroelectric domains; leakage current density; nucleation sites; polarization switching; remanent polarization; single crystals; temperature 25 degC; Crystals; Doping; Hysteresis; Leakage current; Manganese; Switches; Zinc;
fLanguage
English
Journal_Title
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher
ieee
ISSN
0885-3010
Type
jour
DOI
10.1109/TUFFC.2010.1683
Filename
5587404
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