Title :
Low temperature bonding of epitaxial lift off devices with AuSn
Author :
Dohle, G. Rainer ; Drabik, Timothy J. ; Callahan, John J. ; Martin, Kevin P.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fDate :
8/1/1996 12:00:00 AM
Abstract :
The increasing demand for more advanced optoelectronic integrated circuits has created the need for bonding materials with different lattice constants (for example, GaAs on Si). In this paper, we report a new way for the bonding of epitaxial lift off (ELO) devices onto substrates. The multilayer structures investigated in this work produce a resulting AuSn alloy with approximately 84 wt.% gold, but can be bonded with a peak temperature of 235°C. The bonded samples were investigated with several standard surface analysis techniques like optical microscopy, scanning electron microscopy (SEM), and energy dispersive X-ray analysis (EDX) as well as mechanical tests. The results of our research allowed us to optimize the layer structure, the bonding parameters as well as the diffusion barriers
Keywords :
X-ray chemical analysis; diffusion barriers; gold alloys; integrated optoelectronics; lattice constants; optical microscopy; scanning electron microscopy; tin alloys; wafer bonding; 235 degC; AuSn; ELO devices; bonding materials; bonding parameters; diffusion barriers; energy dispersive X-ray analysis; epitaxial lift off devices; lattice constants; low temperature bonding; mechanical tests; multilayer structures; optical microscopy; optoelectronic integrated circuits; peak temperature; scanning electron microscopy; surface analysis techniques; Bonding; Electron optics; Gallium arsenide; Gold alloys; Lattices; Nonhomogeneous media; Optical microscopy; Scanning electron microscopy; Substrates; Temperature;
Journal_Title :
Components, Packaging, and Manufacturing Technology, Part B: Advanced Packaging, IEEE Transactions on
