DocumentCode
1337962
Title
An efficient MOSFET current model for analog circuit simulation-subthreshold to strong inversion
Author
Dunlop, L.
Author_Institution
IBM Gen. Technol. Div., Essex Junction, VT, USA
Volume
25
Issue
2
fYear
1990
fDate
4/1/1990 12:00:00 AM
Firstpage
616
Lastpage
619
Abstract
An analytical model for the subthreshold current of MOSFETs is derived. The model is valid for gate voltages from above the onset of weak inversion to the onset of strong inversion. A complete drain current model is formulated by merging the subthreshold model with a conventional strong inversion model so that, at the transition between weak and strong inversion, continuity of the drain current and its derivatives is maintained
Keywords
analogue circuits; circuit analysis computing; insulated gate field effect transistors; semiconductor device models; MOSFET current model; analog circuit simulation; analytical model; drain current model; strong inversion; subthreshold current; weak inversion; Analog circuits; Analytical models; Circuit simulation; Electron devices; MOSFET circuits; SPICE; Semiconductor device modeling; Steady-state; Subthreshold current; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.52193
Filename
52193
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