Title :
An efficient MOSFET current model for analog circuit simulation-subthreshold to strong inversion
Author_Institution :
IBM Gen. Technol. Div., Essex Junction, VT, USA
fDate :
4/1/1990 12:00:00 AM
Abstract :
An analytical model for the subthreshold current of MOSFETs is derived. The model is valid for gate voltages from above the onset of weak inversion to the onset of strong inversion. A complete drain current model is formulated by merging the subthreshold model with a conventional strong inversion model so that, at the transition between weak and strong inversion, continuity of the drain current and its derivatives is maintained
Keywords :
analogue circuits; circuit analysis computing; insulated gate field effect transistors; semiconductor device models; MOSFET current model; analog circuit simulation; analytical model; drain current model; strong inversion; subthreshold current; weak inversion; Analog circuits; Analytical models; Circuit simulation; Electron devices; MOSFET circuits; SPICE; Semiconductor device modeling; Steady-state; Subthreshold current; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
