A compact monolithic C-band direct conversion receiver

Author

Matinpour, B. ; Chun, C. ; Han, S. ; Lee, C.-H. ; Laskar, J.

Author_Institution

Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA

Volume

10

Issue

2

fYear

2000

Firstpage

67

Lastpage

69

Abstract

A compact monolithic C-band direct conversion receiver has been implemented in a commercial 0.6 μm GaAs MESFET process. Subharmonic mixing is utilized to suppress even-order intermodulations and eliminate DC offsets. Second-order input intercept point (IIP2) of +17 dBm, third-order input intercept point (IIP3) of +8 dBm, and DC offset of -80 dBm are measured on wafer without the use of additional off-chip components. This receiver occupies a die area of 35×53 mil² and operates on 2.7 V with 21 mA of DC current. This is the first demonstration of a C-band direct conversion receiver MMIC with excellent linearity, DC offset, and DC power consumption.

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC mixers; field effect MMIC; gallium arsenide; microwave receivers; radio receivers; 0.6 micron; 2.7 V; 21 mA; DC offsets elimination; DC power consumption; GaAs; GaAs MESFET process; compact direct conversion receiver; even-order intermodulation suppression; monolithic C-band receiver; subharmonic mixing; Baseband; Circuit topology; Energy consumption; Filtering; Gallium arsenide; Impedance matching; Linearity; MESFETs; Power dividers; Radio frequency;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.843103

Filename

843103