Title :
A Wideband Multiharmonic Empirical Large-Signal Model for High-Power GaN HEMTs With Self-Heating and Charge-Trapping Effects
Author :
Yuk, Kelvin S. ; Branner, George R. ; McQuate, David J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Davis, CA, USA
Abstract :
A complete empirical large-signal model for high-power AlGaN/GaN HEMTs (GaN HEMT) utilizing an improved drain current (Ids) formulation with self-heating and charge- trapping modifications is presented. The new drain current equation accurately models the asymmetric bell-shaped transconductance (gm) for high Ids over a large range of biases. A method of systematically employing dynamic IV behavior using pulsed-gate IV and pulsed-gate-pulsed-drain IV datasets over a wide variety of thermal and charge-trapping conditions is presented. The composite nonlinear model accurately predicts the dynamic IV behavior, S-parameters up to 10 GHz, and large-signal wideband harmonic behavior for a multitude of quiescent gate-source and drain-source biases as well as third-order intermodulation distortion (IM3).
Keywords :
III-V semiconductors; gallium compounds; harmonics; high electron mobility transistors; intermodulation distortion; microwave field effect transistors; semiconductor device models; thermal analysis; wide band gap semiconductors; AlGaN-GaN; S-parameters; asymmetric bell-shaped transconductance; charge-trapping effect; composite nonlinear model; drain current equation; drain current formulation; drain-source bias; gate-source bias; high-power HEMT; microwave HEMT; self-heating; third-order intermodulation distortion; wideband multiharmonic empirical large-signal model; AlGaN/GaN; GaN; HEMT; gallium nitride; high power; large-signal; model;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2009.2033299
