Title :
RuO2/GaN Schottky contact formation with superior forward and reverse characteristics
Author :
Lee, Suk-Hun ; Chun, Jae-Kyu ; Hur, Jae-Jin ; Lee, Jae-Seung ; Rue, Gi-Hong ; Bae, Young-Ho ; Hahm, Sung-Ho ; Lee, Yong-Hyun ; Lee, Jung-Hee
Author_Institution :
Sch. of Electron. & Electr. Eng., Kyungpook Nat. Univ., Taegu, South Korea
fDate :
6/1/2000 12:00:00 AM
Abstract :
This is a first time report of a ruthenium oxide (RuO/sub 2/) Schottky contact on GaN. RuO/sub 2/ and Pt Schottky diodes were fabricated and their characteristics compared. When the RuO/sub 2/ Schottky contact was annealed at 500/spl deg/C for 30 min, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the RuO/sub 2/ were dramatically improved. The annealed RuO/sub 2//GaN Schottky contact exhibited a reverse leakage current that was at least two or three orders lower in magnitude than that of the Pt/GaN contact along with a very large barrier height of 1.46 eV, which is the highest value ever reported for a GaN Schottky system.
Keywords :
III-V semiconductors; Schottky barriers; Schottky diodes; annealing; characteristics measurement; gallium compounds; leakage currents; ruthenium compounds; semiconductor device measurement; 1.46 eV; 30 min; 500 degC; III-V semiconductors; RuO/sub 2/-GaN; Schottky contact formation; Schottky diodes; annealing; barrier height; capacitance-voltage characteristics; current-voltage characteristics; forward characteristics; reverse characteristics; reverse leakage current; Annealing; FETs; Fabrication; Ferroelectric materials; Gallium nitride; Schottky barriers; Schottky diodes; Temperature; Thermal conductivity; Thermal stability;
Journal_Title :
Electron Device Letters, IEEE
