Effect of Growth Temperature on InP QD Lasers

Author

Smowton, P.M. ; Al-Ghamdi, M.S. ; Shutts, S. ; Edwards, G. ; Hutchings, M. ; Krysa, A.B.

Author_Institution

Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK

Volume

22

Issue

2

fYear

2010

Firstpage

88

Lastpage

90

Abstract

We describe the effect of growth temperature on the optical absorption, gain, and threshold current density of 730-nm emitting, metal-organic vapor phase epitaxy (MOVPE) grown, InP-AlGaInP quantum-dot lasers. Decreasing the growth temperature from 750??C to 690??C leads to an increase in ground state absorption, while sufficient optical gain and low 300 K threshold current density is obtained in the growth temperature window between 710??C and 730??C . Wider (16 nm compared to 8 nm) interlayer barriers lead to lower threshold current density with 300 K values as low as 165 Acm^-2 for 2-mm-long lasers with uncoated facets.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; current density; gallium compounds; ground states; indium compounds; quantum dot lasers; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; InP-AlGaInP; MOVPE; ground state absorption; growth temperature effect; interlayer barriers; metal-organic vapor phase epitaxy; optical absorption; optical gain; quantum dot lasers; size 2 mm; temperature 690 degC; temperature 710 degC to 730 degC; temperature 750 degC; threshold current density; uncoated facets; wavelength 730 nm; Quantum dots; semiconductor laser; semiconductor materials;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2009.2036245

Filename

5339148