Amorphous silicon thin-film transistor with fluorinated silicon oxide ion stopper

Author

Kim, Kyung Wook ; Cho, Kyu Sik ; Ryu, Jai Il ; Yoo, Keon Ho ; Jang, Jin

Author_Institution

Dept. of Phys., Kyung Hee Univ., Seoul, South Korea

Volume

21

Issue

6

fYear

2000

fDate

6/1/2000 12:00:00 AM

Firstpage

301

Lastpage

303

Abstract

We propose fluorinated silicon oxide (SiOF) as the ion-stopper of bottom-gate amorphous silicon thin film transistors (a-Si:H TFTs). The low dielectric constant SiOF on both the back-channel of the TFT and the crossover regions of gate/data lines can contribute to reducing the RC delay of the gate pulse signal in active-matrix liquid-crystal displays. Besides, the a-Si:H TFT with a SiOF stopper shows an improved performance compared to the widely-employed silicon nitride (SiN/sub x/) stopper TFT, because the fluorine incorporation reduces the interface state density between a-Si:H and SiOF.

Keywords

amorphous semiconductors; delays; elemental semiconductors; hydrogen; interface states; liquid crystal displays; silicon; silicon compounds; thin film transistors; F incorporation; RC delay; Si:H-SiOF; SiOF ion stopper; TFT back-channel; a-Si:H TFT; active-matrix liquid-crystal displays; bottom-gate; crossover regions; fluorinated silicon oxide; gate pulse signal; gate/data lines; interface state density; low dielectric constant SiOF; pixel charging behavior; thin film transistor; Amorphous silicon; Capacitance; Delay; Dielectric constant; Dielectric materials; Liquid crystal displays; Plasma temperature; Silicon compounds; Substrates; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.843157

Filename

843157