Title :
A high-endurance low-temperature polysilicon thin-film transistor EEPROM cell
Author :
Oh, Jung-Hoon ; Chung, Hoon-Ju ; Lee, Nae-In ; Han, Chul-Hi
Author_Institution :
Hyundai Microelectron. Co. Ltd., Cheongju, South Korea
fDate :
6/1/2000 12:00:00 AM
Abstract :
A planar type polysilicon thin-film transistor (poly-Si TFT) EEPROM cell with electron cyclotron resonance (ECR) N/sub 2/O-plasma oxide has been developed with a low temperature (/spl les/400/spl deg/C) process. The poly-Si TFT EEPROM cell has an initial threshold voltage shift of 4 V for programming and erasing voltages of 11 V and -11 V, respectively. Furthermore, the poly-Si TFT EEPROM cell maintains the threshold voltage shift of 4 V after 100 000 program/erase cycles. The excellent high endurance of the fabricated poly-Si TFT EEPROM cell is attributed to the ECR N/sub 2/O-plasma oxide with good charge-to-breakdown (Qbd) characteristics.
Keywords :
EPROM; elemental semiconductors; liquid crystal displays; oxidation; plasma materials processing; semiconductor device breakdown; semiconductor device reliability; silicon; thin film transistors; -11 V; 11 V; 400 C; AMLCD; ECR N/sub 2/O-plasma oxide; N/sub 2/O; Si-SiO/sub 2/; charge-to-breakdown characteristics; erasing voltage; high endurance; low temperature process; planar type polysilicon thin-film transistor; polysilicon thin-film transistor EEPROM cell; program/erase cycles; programming voltage; threshold voltage shift; Annealing; Cyclotrons; Driver circuits; EPROM; Electrons; Glass; Plasma temperature; Substrates; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
