Electrical-Based ESD Characterization of Ultrathin-Body SOI MOSFETs

Author

Griffoni, Alessio ; Thijs, Steven ; Russ, Christian ; Trémouilles, David ; Linten, Dimitri ; Scholz, Mirko ; Simoen, Eddy ; Claeys, Cor ; Meneghesso, Gaudenzio ; Groeseneken, Guido

Author_Institution

Interuniversity Microelectron. Center, Leuven, Belgium

Volume

10

Issue

1

fYear

2010

fDate

3/1/2010 12:00:00 AM

Firstpage

130

Lastpage

141

Abstract

The electrostatic-discharge sensitivity of fully depleted SOI MOSFETs with ultrathin silicon body and ultrathin gate oxide is studied. An original and detailed electrical analysis is carried out in order to investigate the degradation of the electrical DC parameters and classify the observed failure modes and mechanisms. The impact of device geometry and strain engineering is also analyzed.

Keywords

CMOS integrated circuits; MOSFET; electrostatic discharge; silicon-on-insulator; CMOS technology; device geometry; electrical DC parameters; electrical-based ESD characterization; electrostatic discharge; electrostatic-discharge sensitivity; failure modes; silicon-on-insulator; strain engineering; ultrathin gate oxide; ultrathin silicon body; ultrathin-body SOI MOSFET; CMOS; electrostatic discharge (ESD); reliability; silicon-on-insulator (SOI); strain; transmission-line pulse (TLP); ultrathin body (UTB);

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2009.2036156

Filename

5339158