Title :
Electrical-Based ESD Characterization of Ultrathin-Body SOI MOSFETs
Author :
Griffoni, Alessio ; Thijs, Steven ; Russ, Christian ; Trémouilles, David ; Linten, Dimitri ; Scholz, Mirko ; Simoen, Eddy ; Claeys, Cor ; Meneghesso, Gaudenzio ; Groeseneken, Guido
Author_Institution :
Interuniversity Microelectron. Center, Leuven, Belgium
fDate :
3/1/2010 12:00:00 AM
Abstract :
The electrostatic-discharge sensitivity of fully depleted SOI MOSFETs with ultrathin silicon body and ultrathin gate oxide is studied. An original and detailed electrical analysis is carried out in order to investigate the degradation of the electrical DC parameters and classify the observed failure modes and mechanisms. The impact of device geometry and strain engineering is also analyzed.
Keywords :
CMOS integrated circuits; MOSFET; electrostatic discharge; silicon-on-insulator; CMOS technology; device geometry; electrical DC parameters; electrical-based ESD characterization; electrostatic discharge; electrostatic-discharge sensitivity; failure modes; silicon-on-insulator; strain engineering; ultrathin gate oxide; ultrathin silicon body; ultrathin-body SOI MOSFET; CMOS; electrostatic discharge (ESD); reliability; silicon-on-insulator (SOI); strain; transmission-line pulse (TLP); ultrathin body (UTB);
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2009.2036156
