Title :
Geometric effect of multiple-bit soft errors induced by cosmic ray neutrons on DRAM´s
Author :
Satoh, S. ; Tosaka, Y. ; Wender, S.A.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
6/1/2000 12:00:00 AM
Abstract :
Although it has been shown that cosmic ray neutrons play an important role in soft error (SE) phenomena, some important issues remain to be clarified in neutron-induced SE phenomena. This letter reports the geometric effect of multiple-bit SE´s induced by neutrons. Multiple-bit SE´s in 16 Mb DRAM´s are investigated and their geometric effects on high reliability systems are discussed.
Keywords :
DRAM chips; cosmic ray interactions; cosmic ray neutrons; integrated circuit reliability; neutron effects; 16 Mbit; DRAM; cosmic ray neutrons; geometric effect; high reliability systems; multiple-bit soft errors; soft error rate; Analytical models; Circuit simulation; Laboratories; Logic circuits; Neutrons; Particle beams; Random access memory; Semiconductor device measurement; Silicon; Voltage;
Journal_Title :
Electron Device Letters, IEEE
