• DocumentCode
    1338550
  • Title

    A Compact RF MEMS Metal-Contact Switch and Switching Networks

  • Author

    Patel, Chirag D. ; Rebeiz, Gabriel M.

  • Author_Institution
    University of California at San Diego, La Jolla,
  • Volume
    22
  • Issue
    12
  • fYear
    2012
  • Firstpage
    642
  • Lastpage
    644
  • Abstract
    A compact RF MEMS metal-contact switch based on a tethered cantilever topology and orthogonal anchors is presented. The switch is a “medium-force” design capable of achieving a simulated contact force of 0.38–0.72 mN for actuation voltages of 90–100 V and a simulated restoring force of 0.46 mN in a 120 ,\\times, 160 \\mu {\\rm m}^{2} area. The pull-in and release voltages are 75 V and 70 V, respectively. In the down-state position, the switch resistance is 1–2 \\Omega with a Au/Ru hybrid contact. In the up-state, the capacitance is 16 fF, resulting in an isolation of 20 dB at 10 GHz and 9 dB at 40 GHz for an SPST configuration. For a series/shunt configuration, the switch achieves an isolation of 55 dB at 10 GHz and 35 dB at 40 GHz. Compact SP4T and SP6T switching networks are also implemented. The SP4T is 850 ,\\times, 530 \\mu {\\rm m}^{2} (850 ,\\times, 650 \\mu {\\rm m}^{2} with bias pads); the SP6T is 850 ,\\times, 730 \\mu {\\rm m}^{2} (850 ,\\times, 855 \\mu {\\rm m}^{2} with bias pads). Both designs achieve an isolation of \\sim 36~{\\rm dB} and an insertion loss of < 0.3 ~- \\rm dB} at 3 GHz.
  • Keywords
    Electrical resistance measurement; Metals; Micromechanical devices; Radio frequency; Switching circuits; Temperature measurement; Metal-contact; RF MEMS; switching networks;
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2012.2226637
  • Filename
    6359803