Title :
The Effects of Proton-Defect Interactions on Radiation-Induced Interface-Trap Formation and Annealing
Author :
Hughart, D.R. ; Schrimpf, R.D. ; Fleetwood, D.M. ; Rowsey, N.L. ; Law, M.E. ; Tuttle, B.R. ; Pantelides, S.T.
Author_Institution :
Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA
Abstract :
Interface-trap buildup and annealing are examined as a function of temperature, dose rate, and H2 concentration using a physics-based model. The roles of a number of common oxide defects in radiation-induced interface-trap buildup are evaluated under various conditions. Defects near the interface play a significant role in determining interface-trap buildup by trapping protons as proton concentration and temperature increase.
Keywords :
annealing; interface states; nuclear electronics; radiation hardening (electronics); H2 concentration; annealing; common oxide defects; dose rate; interface-trap buildup; physics-based model; proton concentration; proton trapping; proton-defect interactions; radiation-induced interface-trap formation; Annealing; Degradation; Hydrogen; Passivation; Protons; Radiation effects; Temperature measurement; Annealing; elevated temperature irradiation; hydrogen; interface traps; low dose rate; radiation effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2220982
