Title :
Real-Time Soft-Error Testing Results of 45-nm, High-K Metal Gate, Bulk CMOS SRAMs
Author :
Seifert, Norbert ; Kirsch, Matthew
Author_Institution :
Intel Corp., Hillsboro, OR, USA
Abstract :
We report on soft error rates of 45-nm bulk CMOS SRAMs measured in real-time testing experiments. Results are consistent with accelerated testing and demonstrate that alpha-particle induced soft error rates are negligible.
Keywords :
CMOS memory circuits; SRAM chips; alpha-particle effects; high-k dielectric thin films; integrated circuit testing; particle beam diagnostics; radiation hardening (electronics); accelerated beam testing; alpha-particle induced soft error rates; bulk CMOS SRAMs; high-k metal gate; real-time soft-error testing results; Alpha particles; CMOS technology; Life testing; Neutrons; Particle beams; Real-time systems; Alpha particles; life testing; neutrons; radiation; real-time testing; single event; single event effect (SEE); soft error; soft error rate (SER);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2220858
