Title :
Large-Grain Polycrystalline Silicon Solar Cell on Epitaxial Thickening of AIC Seed Layer by Hot Wire CVD
Author :
Wang, Jui-Hao ; Lien, Shui-Yang ; Chen, Chia-Fu ; Whang, Wha-Tzong
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Large-grain polycrystalline silicon (poly-Si) films were prepared on foreign substrates by the epitaxial thickening of seed layers. The seed layers were formed by aluminum-induced crystallization (AIC). Large-grain n-i-p poly-Si solar cells were deposited on epitaxial seeds by hot-wire chemical vapor deposition (HWCVD). Highly (93%) crystalline fractions with a lateral grain size of 5 ??m and an intrinsic layer were grown without incubation. These techniques were employed to prepare large-grain poly-Si thin-film solar cells. An ITO/n-i-p (HWCVD)/p+ (AIC)/Ti/glass-structured poly-Si thin-film solar cell with an initial efficiency of 5.6% was obtained.
Keywords :
chemical vapour deposition; crystallisation; epitaxial layers; solar cells; thin films; AIC seed layer; HWCVD; Si; aluminum-induced crystallization; efficiency 5.6 percent; epitaxial thickening; glass-structured poly-Si thin-film solar cell; hot wire CVD; hot-wire chemical vapor deposition; incubation; intrinsic layer; large-grain n-i-p poly-Si solar cell; large-grain polycrystalline silicon solar cell; size 5 cm; Aluminum-induced crystallization (AIC); hot-wire chemical vapor deposition (HWCVD); polycrystalline silicon (poly-Si);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2035141