Title :
Nanoelectronics [quantum electron devices]
Author :
Hartnagel, H.L. ; Richter, R. ; Grub, A.
Author_Institution :
Inst. fur Hochfrequenztech., Tech. Hochschule Darmstadt, Germany
fDate :
6/1/1991 12:00:00 AM
Abstract :
The dimensions of semiconductor devices can now be reduced to the point where quantum-mechanical effects must be considered in device performance. New device concepts have therefore been proposed, and already realised, in which quantum-mechanical effects are used to achieve increased electron mobilities or in which interference phenomena are utilised. At present, the major drawbacks of nanoelectronics are the technological problems of realising the devices. The emphasis of the paper is on new technological concepts for device realisation. Additionally, an overview of proposed and realised devices is given. Future advances in nanofabrication may come from the development of the scanning tunnelling microscope and related systems
Keywords :
quantum interference devices; quantum optics; semiconductor technology; device performance; dimensions; electron mobilities; interference phenomena; nanoelectronics; nanofabrication; quantum-mechanical effects; scanning tunnelling microscope; semiconductor devices;
Journal_Title :
Electronics & Communication Engineering Journal