Title :
Improved method for the oxide thickness extraction in MOS structures with ultrathin gate dielectrics
Author :
Ghibaudo, Gérard ; Bruyére, Sylvie ; Devoivre, Thierry ; Desalvo, Barbara ; Vincent, Emmanuel
Author_Institution :
CNRS, Grenoble, France
fDate :
5/1/2000 12:00:00 AM
Abstract :
An improved method for the assessment of the oxide thickness applicable to advanced CMOS technologies is proposed. To this end, a proper combination of Maserjian´s technique and of Vincent´s method is used to alleviate the unknown parameter inherent to both extraction procedures and which depends on the employed carrier statistics. The new method has been successfully applied to various technologies with gate oxide thickness ranging from 7 nm to 1.8 nm
Keywords :
CMOS integrated circuits; dielectric thin films; integrated circuit measurement; thickness measurement; 1.8 to 7 nm; CMOS technologies; MOS structures; Maserjian´s technique; Vincent´s method; carrier statistics; extraction procedures; oxide thickness extraction; ultrathin gate dielectrics; unknown parameter; CMOS technology; Capacitance measurement; Dielectrics; Linear predictive coding; MOS capacitors; Microelectronics; Quantum capacitance; Statistical distributions; Statistics; Voltage;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
