DocumentCode
1339232
Title
Improved method for the oxide thickness extraction in MOS structures with ultrathin gate dielectrics
Author
Ghibaudo, Gérard ; Bruyére, Sylvie ; Devoivre, Thierry ; Desalvo, Barbara ; Vincent, Emmanuel
Author_Institution
CNRS, Grenoble, France
Volume
13
Issue
2
fYear
2000
fDate
5/1/2000 12:00:00 AM
Firstpage
152
Lastpage
158
Abstract
An improved method for the assessment of the oxide thickness applicable to advanced CMOS technologies is proposed. To this end, a proper combination of Maserjian´s technique and of Vincent´s method is used to alleviate the unknown parameter inherent to both extraction procedures and which depends on the employed carrier statistics. The new method has been successfully applied to various technologies with gate oxide thickness ranging from 7 nm to 1.8 nm
Keywords
CMOS integrated circuits; dielectric thin films; integrated circuit measurement; thickness measurement; 1.8 to 7 nm; CMOS technologies; MOS structures; Maserjian´s technique; Vincent´s method; carrier statistics; extraction procedures; oxide thickness extraction; ultrathin gate dielectrics; unknown parameter; CMOS technology; Capacitance measurement; Dielectrics; Linear predictive coding; MOS capacitors; Microelectronics; Quantum capacitance; Statistical distributions; Statistics; Voltage;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/66.843630
Filename
843630
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