The impact of crystal cut error on the measured impurity profiles resulting from ion implantation

Author

Chen, Yuanfeng ; Morris, M.F. ; Obradovic, Borna ; Li, Di-Jie

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX

Volume

13

Issue

2

fYear

2000

fDate

5/1/2000 12:00:00 AM

Firstpage

243

Lastpage

248

Abstract

In this paper, the effect of crystal cut error on ion-implanted impurity profiles in silicon is examined. Accurate measurements of crystal cut errors have been performed using the X-ray diffraction method, and a method of calculating the effect of crystal cut error on the implant tilt/rotation angle is provided. The subsequent effect of crystal cut error on ion-implanted profiles is simulated, and the results are compared with SIMS experimental data. The comparison shows the validity of the crystal cut error calculation outlined in this paper, and the importance of taking crystal cut error into account in the comparison of measured and simulated impurity profiles, and in evaluating, calibrating, and comparing ion implant tools

Keywords

X-ray diffraction; angular measurement; elemental semiconductors; impurity distribution; ion implantation; secondary ion mass spectra; semiconductor process modelling; silicon; SIMS; Si; UT-MARLOWE simulation; X-ray diffraction; crystal cut error; implant tilt/rotation angle; ion implant tool calibration; ion-implanted impurity profiles; wafer miscut; Circuit simulation; Implants; Integrated circuit modeling; Ion beams; Ion implantation; Microelectronics; Semiconductor impurities; Semiconductor process modeling; Silicon; X-ray diffraction;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.843640

Filename

843640