3-D visualization of deep submicrometer transistor characteristics

Author

Sitte, R.

Author_Institution

Fac. of Inf. & Commun. Technol., Griffith Univ., Brisbane, Qld.

Volume

13

Issue

2

fYear

2000

fDate

5/1/2000 12:00:00 AM

Firstpage

249

Lastpage

254

Abstract

This paper presents a method for the, three-dimensional (3-D) visualization of device parameters to help identify potential regions of operation as well as highlighting process interactions. The results of the visualization are color-coded mappings of the device parameters and regions that meet the required specification, both showing three process parameters simultaneously. The mappings can be presented as rotating volumes (cubes) and slice plot. They can be obtained with relative ease using commercially available software, and the approach could easily be integrated into existing simulation software

Keywords

MOSFET; data visualisation; design of experiments; electronic engineering computing; semiconductor device models; semiconductor process modelling; surface fitting; 3D visualization; MINIMOS; MOSFET; RSM; color-coded mappings; cubes; deep submicrometer transistor characteristics; design of experiments; device parameters; potential regions of operation; process interactions; process parameters; rotating volumes; simulation software; slice plot; Animation; Fluctuations; MOSFET circuits; Manufacturing; Pareto analysis; Simultaneous localization and mapping; Software design; Threshold voltage; US Department of Energy; Visualization;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.843641

Filename

843641