Title :
Combined Effects of
Co Dose and High Frequency Interferences on a Discrete Bipolar Transistor
Author :
Doridant, A. ; Raoult, J. ; Jarrix, S. ; Blain, A. ; Hoffmann, P. ; Chatry, N. ; Calvel, P. ; Dusseau, L.
Author_Institution :
Inst. d´´Electron. du Sud, Univ. Montpellier 2, Montpellier, France
Abstract :
This paper concerns bipolar transistors subject to a double aggression: dose irradiation and high-frequency interference. The electromagnetic interference is injected in a contactless way in the near-field zone around the device. Parameters of the interference are power and frequency, the latter largely out of band of operation of the transistors. The output voltage of the transistor exhibits changes, due to rectification and to some extent to current crowding. The importance of the base bias set-up for the type of change occurring in voltage is displayed. After irradiation with a 60Co source, the voltage output will change under electromagnetic interference but sometimes in an opposite way as initially measured. The impact of the irradiation with respect to electromagnetic susceptibility is highlighted from a physical point of view. Finally preliminary results of simulation for susceptibility prediction are given and a discussion is given on the limits of the transistor model used.
Keywords :
bipolar transistors; dosimetry; electromagnetic interference; rectification; 60Co; discrete bipolar transistor; dose effect; dose irradiation; electromagnetic interference; electromagnetic susceptibility; high frequency interferences; near-field zone; rectification; transistor model; Bipolar transistors; Electromagnetic interference; Electromagnetics; Radiation effects; $^{60}$Co; Bipolar transistor; near-field interference; total ionizing dose;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2227276