Title :
Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance
Author :
Ferlet-Cavrois, Véronique ; Binois, Christian ; Carvalho, Aminata ; Ikeda, Naomi ; Inoue, Masanori ; Eisener, Bernd ; Gamerith, Stefan ; Chaumont, Géraldine ; Pintacuda, Francesco ; Javanainen, Arto ; Schwank, James R. ; Shaneyfelt, Marty R. ; Lauenstein,
Author_Institution :
ESTEC, Eur. Space Agency, ESA, Noordwijk, Netherlands
Abstract :
A methodology for power MOSFET radiation hardness assurance is proposed. It is based on the statistical analysis of destructive events, such as gate oxide rupture. Examples of failure rate calculations are performed.
Keywords :
MOSFET; radiation effects; destructive events; failure rate calculations; gate oxide rupture; heavy-ion induced gate rupture; power MOSFET; radiation hardness assurance; Capacitors; Dielectric breakdown; Power MOSFET; Radiation effects; Radiation hardening; Space technology; Statistical analysis; Heavy ions; power MOSFETs; radiation hardness assurance; single event gate rupture; time dependant dielectric breakdown;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2223761
