Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors

Author

Virmontois, Cedric ; Goiffon, Vincent ; Corbière, Franck ; Magnan, Pierre ; Girard, Sylvain ; Bardoux, Alain

Author_Institution

CNES, Toulouse, France

Volume

59

Issue

6

fYear

2012

Firstpage

2872

Lastpage

2877

Abstract

This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to 1.2×10⁶ TeV/g. Particle fluence up to 5×10¹⁴ n.cm^-2 is investigated to observe electro-optic degradation in harsh environments. The dark current is also investigated and it would appear that it is possible to use the dark current spectroscopy in PPD CIS. The dark current random telegraph signal is also observed and characterized using the maximum transition amplitude.

Keywords

CMOS image sensors; photodiodes; semiconductor counters; dark current random telegraph signal; dark current spectroscopy; displacement damage effects; electro-optic degradation; harsh environments; maximum transition amplitude; monolithic active pixel sensor; neutron irradiation; pinned photodiode CMOS image sensors; proton irradiation; Active pixel sensors; CMOS image sensors; Dark current; Neutrons; Photodiodes; Protons; Radiation effects; Active pixel sensor (APS); CMOS image sensor (CIS); displacement damage dose (DDD); monolithic active pixel sensor (MAPS); pinned photodiode (PPD);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2012.2224129

Filename

6361444