Title :
Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors
Author :
Virmontois, Cedric ; Goiffon, Vincent ; Corbière, Franck ; Magnan, Pierre ; Girard, Sylvain ; Bardoux, Alain
Author_Institution :
CNES, Toulouse, France
Abstract :
This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to 1.2×106 TeV/g. Particle fluence up to 5×1014 n.cm-2 is investigated to observe electro-optic degradation in harsh environments. The dark current is also investigated and it would appear that it is possible to use the dark current spectroscopy in PPD CIS. The dark current random telegraph signal is also observed and characterized using the maximum transition amplitude.
Keywords :
CMOS image sensors; photodiodes; semiconductor counters; dark current random telegraph signal; dark current spectroscopy; displacement damage effects; electro-optic degradation; harsh environments; maximum transition amplitude; monolithic active pixel sensor; neutron irradiation; pinned photodiode CMOS image sensors; proton irradiation; Active pixel sensors; CMOS image sensors; Dark current; Neutrons; Photodiodes; Protons; Radiation effects; Active pixel sensor (APS); CMOS image sensor (CIS); displacement damage dose (DDD); monolithic active pixel sensor (MAPS); pinned photodiode (PPD);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2224129
