DocumentCode :
1339701
Title :
Continuous wave lasing in GaInAsP microdisk injection laser with threshold current of 40 μA
Author :
Fujita, M. ; Ushigome, R. ; Baba, T.
Author_Institution :
Div. of Electr. & Comput. Eng., Yokohama Nat. Univ., Japan
Volume :
36
Issue :
9
fYear :
2000
fDate :
4/27/2000 12:00:00 AM
Firstpage :
790
Lastpage :
791
Abstract :
A threshold current of 40 μA, nearly 1/4 of the previous lowest record, has been obtained in a GaInAsP-InP microdisk injection laser. This decrease was thought to be mainly due to the reduction of disk diameter and symmetric post-claddings by Cl2/Xe inductively coupled plasma etching
Keywords :
III-V semiconductors; claddings; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; microdisc lasers; optical fabrication; quantum well lasers; sputter etching; 40 muA; Cl2-Xe; Cl2/Xe; GaInAsP; GaInAsP microdisk injection laser; GaInAsP-InP; GaInAsP-InP microdisk injection laser; continuous wave lasing; disk diameter; inductively coupled plasma etching; symmetric post-claddings; threshold current;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20000609
Filename :
843773
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1339701
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