• DocumentCode
    1339701
  • Title

    Continuous wave lasing in GaInAsP microdisk injection laser with threshold current of 40 μA

  • Author

    Fujita, M. ; Ushigome, R. ; Baba, T.

  • Author_Institution
    Div. of Electr. & Comput. Eng., Yokohama Nat. Univ., Japan
  • Volume
    36
  • Issue
    9
  • fYear
    2000
  • fDate
    4/27/2000 12:00:00 AM
  • Firstpage
    790
  • Lastpage
    791
  • Abstract
    A threshold current of 40 μA, nearly 1/4 of the previous lowest record, has been obtained in a GaInAsP-InP microdisk injection laser. This decrease was thought to be mainly due to the reduction of disk diameter and symmetric post-claddings by Cl2/Xe inductively coupled plasma etching
  • Keywords
    III-V semiconductors; claddings; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; microdisc lasers; optical fabrication; quantum well lasers; sputter etching; 40 muA; Cl2-Xe; Cl2/Xe; GaInAsP; GaInAsP microdisk injection laser; GaInAsP-InP; GaInAsP-InP microdisk injection laser; continuous wave lasing; disk diameter; inductively coupled plasma etching; symmetric post-claddings; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000609
  • Filename
    843773
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1339701