• DocumentCode
    1339954
  • Title

    Strong photosensitivity in tin-doped silica films

  • Author

    Gaff, K. ; Durandet, A. ; Weijers, T. ; Love, J. ; Boswell, R.

  • Author_Institution
    Res. Sch. of Phys. Sci. & Eng., Australian Nat. Univ., Canberra, ACT, Australia
  • Volume
    36
  • Issue
    9
  • fYear
    2000
  • fDate
    4/27/2000 12:00:00 AM
  • Firstpage
    842
  • Lastpage
    843
  • Abstract
    The observation is reported of a strong negative change in the refractive index of tin-doped thin silica films deposited by helicon activated reactive evaporation. Samples with concentrations between 5 and 25 mol% SnO2 were exposed to 2 kJ/cm2 of 248 nm UV radiation. Negative refractive index changes as large as -2.7×10-3 were observed on irradiation
  • Keywords
    optical films; refractive index; silicon compounds; tin; ultraviolet radiation effects; vacuum deposited coatings; 248 nm; SiO2:Sn; UV irradiation; helicon activated reactive evaporation; photosensitivity; refractive index; tin-doped silica thin film;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000574
  • Filename
    843808