DocumentCode :
1339954
Title :
Strong photosensitivity in tin-doped silica films
Author :
Gaff, K. ; Durandet, A. ; Weijers, T. ; Love, J. ; Boswell, R.
Author_Institution :
Res. Sch. of Phys. Sci. & Eng., Australian Nat. Univ., Canberra, ACT, Australia
Volume :
36
Issue :
9
fYear :
2000
fDate :
4/27/2000 12:00:00 AM
Firstpage :
842
Lastpage :
843
Abstract :
The observation is reported of a strong negative change in the refractive index of tin-doped thin silica films deposited by helicon activated reactive evaporation. Samples with concentrations between 5 and 25 mol% SnO2 were exposed to 2 kJ/cm2 of 248 nm UV radiation. Negative refractive index changes as large as -2.7×10-3 were observed on irradiation
Keywords :
optical films; refractive index; silicon compounds; tin; ultraviolet radiation effects; vacuum deposited coatings; 248 nm; SiO2:Sn; UV irradiation; helicon activated reactive evaporation; photosensitivity; refractive index; tin-doped silica thin film;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20000574
Filename :
843808
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1339954
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