Title :
Reliability Implications of Bias-Temperature Instability in Digital ICs
Author :
Park, Sang Phill ; Kang, Kunhyuk ; Roy, Kaushik
Author_Institution :
Purdue Univ., West Lafayette, IN, USA
Abstract :
Bias temperature instability (BTI) is one of the major reliability challenges in nanoscale CMOS technology. This article investigates the severity of such degradation in logic and memory circuits. The simulation results reveal that BTI poses severe constraints on reliable memory design, especially in the presence of random process variations.
Keywords :
CMOS integrated circuits; integrated circuit design; integrated circuit reliability; logic circuits; bias-temperature instability; digital IC; logic circuits; memory circuits; nanoscale CMOS technology; random process variations; reliability implications; Circuit simulation; Degradation; Logic circuits; MOSFETs; Niobium compounds; Silicon; Stress; Temperature; Titanium compounds; Transistors; NBTI; PTM; RDF; Si-H bonds; bias-temperature instability; design and test; memory array; nanoscale technology; random logic; random process variation;
Journal_Title :
Design & Test of Computers, IEEE
DOI :
10.1109/MDT.2009.154
