• DocumentCode
    1340160
  • Title

    Modeling Low-k Dielectric Breakdown to Determine Lifetime Requirements

  • Author

    Bashir, Muhammad ; Milor, Linda

  • Author_Institution
    Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    26
  • Issue
    6
  • fYear
    2009
  • Firstpage
    18
  • Lastpage
    27
  • Abstract
    Low-k dielectric breakdown and stress migration have emerged as new sources of wearout for on-chip interconnect. This article analyzes statistical data from a 45-nm test chip and constructs a methodology to determine the lifetime of low-k materials under process variations.
  • Keywords
    electric breakdown; low-k dielectric thin films; low-k dielectric breakdown; low-k materials; on-chip interconnect; statistical data; stress migration; Chemicals; Copper; Dielectric breakdown; Dielectric materials; Dielectric measurements; Electric breakdown; Geometry; Stress; Testing; Voltage; design and test; line width variation; low-k dielectrics; semiconductor reliability;
  • fLanguage
    English
  • Journal_Title
    Design & Test of Computers, IEEE
  • Publisher
    ieee
  • ISSN
    0740-7475
  • Type

    jour

  • DOI
    10.1109/MDT.2009.151
  • Filename
    5340384
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1340160