مرکز منطقه ای اطلاع رساني علوم و فناوري - An Ultra-Low-Power MMIC Amplifier Using 50-nm <formula formulatype="inline"> <img src="/images/tex/19480.gif" alt="\\delta "> </formula>-Doped <formula formulatype="inline"> <img src="/images/tex/19481.gif" alt="\\hbox {In}_{0.52}\\hbox {Al}

Title :

An Ultra-Low-Power MMIC Amplifier Using 50-nm $\\delta$ -Doped $\\hbox {In}_{0.52}\\hbox {Al}_{0.48}\\hbox </div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Chi-Jeon Hwang ; Lok, L.B. ; Chong, H.M.H. ; Holland, Martin ; Thayne, I.G. ; Elgaid, K.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>31</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>11</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2010</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1230</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1232</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>An ultra-low-power monolithic amplifier using 50-nm gate-length GaAs metamorphic high-electron-mobility transistor (MHEMT) has been designed and fabricated by a coplanar waveguide monolithic microwave integrated circuit process. A double (5-doped In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.53</sub>Ga<sub>0.47</sub>As MHEMT technology with optimal doping profiles was used to achieve both ultra-low dc power consumption and good dynamic-range performance. The single-stage amplifier operates in the 24-GHz band and shows typical gain of 7.2 dB, ±0.5 dB bandwidth of 1.2 GHz, return losses better than 9 dB, and input IP<sub>3</sub> (IIP<sub>3</sub>) of +3 dBm while consuming only 0.9 mW of dc power. These experimental results demonstrate the outstanding potential of MHEMT technology for ultra-low-power applications such as wireless sensor networks.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>III-V semiconductors; MMIC amplifiers; coplanar waveguides; gallium arsenide; high electron mobility transistors; indium compounds; low-power electronics; semiconductor doping; In<sub>0.52</sub>Al<sub>0.48</sub>As-In<sub>0.53</sub>Ga<sub>0.47</sub>As; bandwidth 1.2 GHz; coplanar waveguide monolithic microwave integrated circuit; frequency 24 GHz; gain 7.2 dB; metamorphic HEMT; metamorphic high-electron-mobility transistor; monolithic amplifier; optimal doping profile; ultra-low-power MMIC amplifier; Gallium arsenide; Logic gates; MMICs; Noise; Performance evaluation; Power demand; mHEMTs; <formula formulatype=$ $delta$-doped $hbox{In}_{0.52}hbox{Al}_{0.48}hbox{As/In}_{0.53}hbox{Ga}_{0.47}hbox{As}$; Coplanar waveguide; metamorphic high-electron-mobility transistor (MHEMT); monolithic microwave integrated circuit (MMIC); ultra-low power consumption;