DocumentCode :
1340627
Title :
A 1 k-Pixel Video Camera for 0.7–1.1 Terahertz Imaging Applications in 65-nm CMOS
Author :
Al Hadi, Richard ; Sherry, Hani ; Grzyb, Janusz ; Zhao, Yan ; Förster, Wolfgang ; Keller, Hans M. ; Cathelin, Andreia ; Kaiser, Andreas ; Pfeiffer, Ullrich R.
Author_Institution :
Inst. for High-Freq. & Commun. Technol., Univ. of Wuppertal, Wuppertal, Germany
Volume :
47
Issue :
12
fYear :
2012
Firstpage :
2999
Lastpage :
3012
Abstract :
A 1 k-pixel camera chip for active terahertz video recording at room-temperature has been fully integrated in a 65-nm CMOS bulk process technology. The 32 × 32 pixel array consists of 1024 differential on-chip ring antennas coupled to NMOS direct detectors operated well-beyond their cutoff frequency based on the principle of distributed resistive self-mixing. It includes row and column select and integrate-and-dump circuitry capable of capturing terahertz videos up to 500 fps. The camera chip has been packaged together with a 41.7-dBi silicon lens (measured at 856 GHz) in a 5 × 5 × 3 cm3 camera module. It is designed for continuous-wave illumination (no lock-in technique required). In this video-mode the camera operates up to 500 fps. At 856 GHz it achieves a responsivity Rv of about 115 kV/W (incl. a 5-dB VGA gain) and a total noise equivalent power (NEPtotal) of about 12 nW integrated over its 500-kHz video bandwidth. At a 5-kHz chopping frequency (non-video mode) a single pixel can provide a maximum responsivity Rv of 140 kV/W (incl. a 5-dB VGA gain) and a minimum noise equivalent power ( NEP) of 100 pW/√Hz at 856 GHz. The wide-band antenna and pixel design achieves a 3-dB bandwidth of at least 790-960 GHz.
Keywords :
CMOS image sensors; lenses; submillimetre wave imaging; terahertz wave imaging; video cameras; video recording; CMOS bulk process technology; NMOS direct detectors; active terahertz video recording; camera chip; camera module; continuous wave illumination; frequency 0.7 THz to 1.1 THz; on-chip ring antennas; power 12 nW; room temperature; silicon lens; size 65 nm; terahertz imaging applications; video camera; Arrays; Broadband antennas; CMOS integrated circuits; Cameras; Detectors; Transistors; CMOS; distributed resistive self-mixing; resistive mixer; silicon lens; sub-millimeter wave detectors; sub-millimeter wave imaging; terahertz (THz); terahertz direct detection; terahertz imaging;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2012.2217851
Filename :
6363486
Link To Document :
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