Title :
Low-power silicon BJT LNA for 1.9 GHz
Author :
Kucera, Jakub J. ; Lott, Urs
Author_Institution :
Eidgenossische Tech. Hochschule, Zurich, Switzerland
fDate :
3/1/1998 12:00:00 AM
Abstract :
A two-stage 1.9-GHz monolithic low-noise amplifier (LNA) with a measured noise figure of 2.3 dB and an associated gain of 15 dB was fabricated in a standard silicon bipolar transistor array. It dissipates 5.2 mW from a 3-V supply including the bias circuitry. Input return loss and isolation are -9 and -20 dB, respectively
Keywords :
MMIC amplifiers; UHF amplifiers; UHF integrated circuits; bipolar MMIC; elemental semiconductors; integrated circuit noise; silicon; -9 dB; 1.9 GHz; 15 dB; 2.3 dB; 3 V; 5.2 mW; Si; Si BJT LNA; UHF IC; bias circuitry; low-noise amplifier; standard Si bipolar transistor array; two-stage monolithic amplifier; Circuit noise; Circuit simulation; Feedback; Gain measurement; Low-noise amplifiers; Noise figure; Noise measurement; Radio frequency; Silicon; Voltage;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
