Experimental Evidence of the Impact of Nitrogen on Carrier Capture and Escape Times in InGaAsN/GaAs Single Quantum Well

Author

Xu, Lifang ; Patel, Dinesh ; Menoni, Carmen S. ; Yeh, Jeng-Ya ; Mawst, Luke J. ; Tansu, Nelson

Author_Institution

Dept. of Electr. & Comput. Eng., Colorado State Univ., Fort Collins, CO, USA

Volume

4

Issue

6

fYear

2012

Firstpage

2262

Lastpage

2271

Abstract

We report our experimental results and theoretical analysis on carrier escape time in In_0.4Ga_0.6As_{1 -}yNy/GaAs (y = 0; 0.005) ridge waveguide single-quantum-well (QW) lasers with N-contents of 0% and 0.5%. The experiments were carried out by using novel time-resolved two-color pump-probe transmission measurements. Our results show a significant decrease of carrier escape time with nitrogen incorporation in the InGaAsN QW, which agrees well with the values obtained from the theoretical calculation based on thermally activated hole leakage. The measurement results provide experimental supports for hole leakage theory.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; nitrogen; optical pumping; quantum well lasers; ridge waveguides; semiconductor doping; waveguide lasers; InGaAsN-GaAs; carrier capture time; carrier escape time; ridge waveguide single-quantum-well laser; thermally activated hole leakage; time-resolved two-color pump-probe transmission measurements; Charge carrier density; Indium gallium arsenide; Laser excitation; Laser theory; Measurement by laser beam; Probes; Pump lasers; 1.3-$muhbox{m}$ lasers; InGaAsN; Quantum-well (QW) lasers; carrier capture and escape process;

fLanguage

English

Journal_Title

Photonics Journal, IEEE

Publisher

ieee

ISSN

1943-0655

Type

jour

DOI

10.1109/JPHOT.2012.2230251

Filename

6363509