Effect of ionising radiation on the characteristics of a MOSFET

Author

Dasgupta, S. ; Chakrabarti, P.

Author_Institution

Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India

Volume

147

Issue

2

fYear

2000

fDate

4/1/2000 12:00:00 AM

Firstpage

133

Lastpage

138

Abstract

The effect of radiation-induced changes on the characteristics of an n-channel MOSFET has been investigated theoretically. A one-dimensional semi-numerical model of the device has been developed which can estimate fairly accurate characteristics of the device under unirradiated and irradiated conditions. The effect of ionising radiation on the channel voltage and electric field profile in the channel has been estimated numerically for the first time. The present model enables one to determine the I_D-V_D and transfer characteristics of the device by considering the field dependent mobility of the surface channel in the irradiated condition. The model presented here can be used as a basic tool for analysing MOS transistors exposed to a nuclear environment

Keywords

MOSFET; carrier mobility; radiation effects; semiconductor device models; 1D semi-numerical model; I_D-V_D characteristics; MOS transistors; NMOSFET; channel voltage; electric field profile; field dependent mobility; ionising radiation effect; irradiated conditions; n-MOSFET characteristics; n-channel MOSFET; nuclear environment; one-dimensional model; radiation-induced changes; surface channel; transfer characteristics;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:20000203

Filename

844457