Title :
Evaluation of plasma charging damage in ultrathin gate oxides
Author :
Lin, Horng-Chih ; Chen, Chi-Chun ; Chien, Chao-Hsing ; Hsein, Szu-Kang ; Wang, Meng-Fan ; Chao, Tien-Sheng ; Huang, Tiao-Yuan ; Chang, Chun-Yen
Author_Institution :
Nat. Nano Device Labs., Hsinchu, Taiwan
fDate :
3/1/1998 12:00:00 AM
Abstract :
Monitoring of plasma charging damage in ultrathin oxides (e.g., <4 mm) is essential to understand its impact on device reliability. However, it is observed that the shift of several device parameters, including threshold voltage, transconductance, and subthreshold swing, are not sensitive to plasma charging and thus not suitable for this purpose. Consequently, some destructive methods, such as the charge-to-breakdown measurement, are necessary to evaluate plasma damage in the ultrathin oxides.
Keywords :
MOSFET; electric breakdown; plasma applications; semiconductor device reliability; semiconductor device testing; MOSFETs; charge-to-breakdown measurement; dielectric breakdown; plasma charging damage; plasma materials processing; semiconductor device reliability; subthreshold swing; threshold voltage; transconductance; ultrathin gate oxides; Chaos; Current measurement; Monitoring; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Threshold voltage; Transconductance; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
