DocumentCode
1340843
Title
DC model of GaAs MESFETs improving circuit simulation
Author
Giorgio, A. ; Passaro, V.M.N. ; Perri, A.G.
Author_Institution
Dipt. di Elettrotecnica ed Elettronica, Politecnico di Bari, Italy
Volume
147
Issue
2
fYear
2000
fDate
4/1/2000 12:00:00 AM
Firstpage
139
Lastpage
145
Abstract
An improved DC model of low- and high-power GaAs MESFETs is proposed. The third-order dependence of fitting parameters on bias conditions is included. The main objective is to obtain a very good agreement between measured and simulated I-V curves, particularly in the knee and saturation regions, regardless of the technological characteristics of the device. The model has been compared with the most significant models presented in the literature, showing some significant improvements of the state-of-the-art
Keywords
III-V semiconductors; Schottky gate field effect transistors; circuit simulation; gallium arsenide; power MESFET; semiconductor device models; DC model; GaAs; GaAs MESFETs; I-V curves; bias conditions; circuit simulation; fitting parameters; high-power MESFETs; knee region; low-power MESFETs; saturation region; third-order dependence;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings -
Publisher
iet
ISSN
1350-2409
Type
jour
DOI
10.1049/ip-cds:20000051
Filename
844458
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