730 nm InAlGaAs SQW laser diodes grown by MOVPE using `ether-free´ and conventional `solution´ trimethylindium

SQW GRINSCH laser diodes for high power operation at 730 nm have been fabricated using atmospheric pressure MOVPE. The SQW InAlGaAs gain region has been prepared using two different trimethylindium sources, consisting of either an N N-dimethyldodecylamine: TMI adduct solution of conventionally manufactured/purified TMI, or solid TMI (diethylether-free synthesis). Both TMI sources address the reduction of contamination associated with the solvent diethylether, commonly used in the preparative route to TMI. Furthermore, devices prepared from ether-free TMI show a lower threshold current and longer lifetime for the same waveguide geometry. The lowering of residual oxygen from TMI is thought to be the most likely reason for these material improvements