Modification of internal temperature distribution in broad area semiconductor lasers and the effect on near- and far-field distributions

Author

Neill, ÉE O. ; Brien, P.O. ; Houlihan, J. ; McInerney, J.

Author_Institution

Dept. of Phys., Nat. Univ. of Ireland, Cork, Ireland

Volume

147

Issue

1

fYear

2000

fDate

2/1/2000 12:00:00 AM

Firstpage

31

Lastpage

35

Abstract

The results from two novel experimental techniques to investigate the influence of thermal effects on large aperture, high power semiconductor lasers are presented. The first technique is achieved via fabricated micro-stripe heating elements, integrated onto the laser diode using standard photolithographic technology. The second involves focusing an Ar⁺ beam onto the injection stripe of a standard broad-area laser to investigate the effect of localised heating. Results from both experiments show that the internal temperature distribution has a pronounced influence on the near- and far-fields of large aperture semiconductor lasers. By tailoring this distribution, significant improvements to near- and far-fields can be obtained

Keywords

heating elements; optical fabrication; optical focusing; photolithography; semiconductor lasers; temperature distribution; Ar⁺ beam; broad area semiconductor lasers; far-field distributions; far-fields; high power semiconductor lasers; injection stripe; internal temperature distribution; large aperture; large aperture semiconductor lasers; laser diode; localised heating; micro-stripe heating elements; near-field distributions; near-fields; standard broad-area laser; standard photolithographic technology; thermal effects;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20000205

Filename

844466