Analysis of distributed feedback organic semiconductor lasers

Author

Barlow, G.F. ; Shore, K.A.

Author_Institution

Sch. of Electron. Eng. & Comput. Syst., Univ. of Wales, Bangor, UK

Volume

147

Issue

1

fYear

2000

fDate

2/1/2000 12:00:00 AM

Firstpage

61

Lastpage

66

Abstract

An analysis is undertaken of a DFB structure designed to lower the threshold gain of organic semiconductor lasers operating at 632 nm. Coupling coefficients in the structure are found to be of order 350 cm ^-1 using a 200 nm grating period. Incorporating a DFB grating reduces gain threshold by approximately 50% of that required for an equivalent FP structure. Surface relief gratings are found to be a good means of providing the feedback, offering high coupling coefficients in respect to their position away from the field maxima as well as cost advantages in manufacturing using imprinting techniques

Keywords

diffraction gratings; distributed feedback lasers; laser theory; laser transitions; organic compounds; semiconductor device models; semiconductor lasers; 200 nm; 632 nm; DFB grating; DFB structure design; coupling coefficients; distributed feedback organic semiconductor laser analysis; equivalent FP structure; feedback; field maxima; gain threshold; grating period; high coupling coefficients; imprinting techniques; surface relief gratings; threshold gain;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20000389

Filename

844472