• DocumentCode
    1340968
  • Title

    Effect of Dicing Technique on the Fracture Strength of Si Dies With Emphasis on Multimodal Failure Distribution

  • Author

    Chae, Seung-Hyun ; Zhao, Jie-Hua ; Edwards, Darvin R. ; Ho, Paul S.

  • Author_Institution
    Univ. of Texas at Austin, Austin, TX, USA
  • Volume
    10
  • Issue
    1
  • fYear
    2010
  • fDate
    3/1/2010 12:00:00 AM
  • Firstpage
    149
  • Lastpage
    156
  • Abstract
    The ball-on-ring (BOR) and three-point bending (3PB) tests were used in this paper to characterize the effect of the dicing process on the fracture strength of Si dies. Dies prepared by blade- and laser-dicing processes were studied. The edge-initiated fracture was distinguished from the surface-initiated fracture by fractographic analysis. The fracture-strength distributions related to surface flaws in the 3PB test, as well as the BOR test, were consistent regardless of the dicing process. For the edge-defect-induced failure mode, on the other hand, blade-sawn dies showed wider spread distribution than laser-sawn dies. It was due to the scattered nature in size and location of the edge flaws induced by blade dicing. Laser-sawn dies showed a tighter distribution of die strength, although the average die strength was slightly lower than that of blade-sawn dies. This paper has successfully demonstrated that the die failure caused by edge defects can be deconvoluted from the 3PB test data by using fractographic observation.
  • Keywords
    elemental semiconductors; fracture toughness testing; silicon; Si; Si dies; ball-on-ring tests; blade-dicing processes; edge-initiated fracture; fractographic analysis; fracture-strength distributions; laser-dicing processes; laser-sawn dies; multimodal failure distribution; surface-initiated fracture; three-point bending tests; wider spread distribution; Ball on ring (BOR); Weibull; deconvolution; dicing; die strength; three-point bending (3PB);
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2009.2037141
  • Filename
    5340587