Integrated circuit technology options for RFICs-present status and future directions

Author

Larson, Lawrence E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA

Volume

33

Issue

3

fYear

1998

fDate

3/1/1998 12:00:00 AM

Firstpage

387

Lastpage

399

Abstract

This paper will summarize the technology tradeoffs that are involved in the implementation of radio frequency integrated circuits for wireless communications. Radio transceiver circuits have a very broad range of requirements-including noise figure, linearity, gain, phase noise, and power dissipation. The advantages and disadvantages of each of the competing technologies-Si CMOS and bipolar junction transistors (BJTs), Si/SiGe HBTs and GaAs MESFETs, PHEMTS and HBTs will be examined in light of these requirements

Keywords

integrated circuit noise; integrated circuit technology; technological forecasting; transceivers; GaAs; GaAs HBT; GaAs MESFET; GaAs PHEMT; RFIC; Si; Si BJT; Si CMOS; Si-SiGe; Si/SiGe HBT; gain; linearity; noise figure; phase noise; power dissipation; radio frequency integrated circuit technology; radio transceiver; wireless communication; CMOS technology; Integrated circuit technology; Linearity; Noise figure; Phase noise; Power dissipation; Radio transceivers; Radiofrequency integrated circuits; Silicon germanium; Wireless communication;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.661204

Filename

661204