• DocumentCode
    1341092
  • Title

    2-μm, 1.6-mW gated-gm sampler with 72-dB SFDR for f s=160 Ms/s and fin=320.25 MHz

  • Author

    Munroe, Scott C. ; Lu, Albert K.

  • Author_Institution
    Analog Devices Inc., Wilmington, MA, USA
  • Volume
    33
  • Issue
    3
  • fYear
    1998
  • fDate
    3/1/1998 12:00:00 AM
  • Firstpage
    400
  • Lastpage
    409
  • Abstract
    The sampler is often the limitation in determining how early in the signal chain the conversion to discrete time can be done. We have fabricated a novel high-speed, wideband sampler core based upon a charge-domain gated-gm cell that has a measured spurious free dynamic range (SFDR) of 72 db for a sample rate of 160 Ms/s and an input frequency of 320.25 MHz. The sampling bandwidth is ~880 MHz. This performance is achieved at ~1% of the power and ~1% of the core area of a state-of-the-art track-and-hold circuit implemented in a much more advanced IC technology. Simulations indicate that far higher performance is possible in a more advanced process and with minor circuit optimization
  • Keywords
    adaptive signal processing; analogue-digital conversion; circuit optimisation; field effect transistor switches; jitter; sample and hold circuits; signal sampling; 1.6 mW; 2 micron; 320.25 MHz; 880 MHz; IC technology; SFDR; charge-domain gated-gm cell; circuit optimization; core area; discrete time conversion; gated-gm sampler; input frequency; sample rate; sampling bandwidth; spurious free dynamic range; track-and-hold circuit; wideband sampler core; Apertures; BiCMOS integrated circuits; Feedback circuits; Frequency; MOSFETs; Power semiconductor switches; Pulse amplifiers; Sampling methods; Switching circuits; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.661205
  • Filename
    661205