DocumentCode :
1341092
Title :
2-μm, 1.6-mW gated-gm sampler with 72-dB SFDR for f s=160 Ms/s and fin=320.25 MHz
Author :
Munroe, Scott C. ; Lu, Albert K.
Author_Institution :
Analog Devices Inc., Wilmington, MA, USA
Volume :
33
Issue :
3
fYear :
1998
fDate :
3/1/1998 12:00:00 AM
Firstpage :
400
Lastpage :
409
Abstract :
The sampler is often the limitation in determining how early in the signal chain the conversion to discrete time can be done. We have fabricated a novel high-speed, wideband sampler core based upon a charge-domain gated-gm cell that has a measured spurious free dynamic range (SFDR) of 72 db for a sample rate of 160 Ms/s and an input frequency of 320.25 MHz. The sampling bandwidth is ~880 MHz. This performance is achieved at ~1% of the power and ~1% of the core area of a state-of-the-art track-and-hold circuit implemented in a much more advanced IC technology. Simulations indicate that far higher performance is possible in a more advanced process and with minor circuit optimization
Keywords :
adaptive signal processing; analogue-digital conversion; circuit optimisation; field effect transistor switches; jitter; sample and hold circuits; signal sampling; 1.6 mW; 2 micron; 320.25 MHz; 880 MHz; IC technology; SFDR; charge-domain gated-gm cell; circuit optimization; core area; discrete time conversion; gated-gm sampler; input frequency; sample rate; sampling bandwidth; spurious free dynamic range; track-and-hold circuit; wideband sampler core; Apertures; BiCMOS integrated circuits; Feedback circuits; Frequency; MOSFETs; Power semiconductor switches; Pulse amplifiers; Sampling methods; Switching circuits; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.661205
Filename :
661205
Link To Document :
بازگشت