DocumentCode
1341099
Title
A high-efficiency CMOS voltage doubler
Author
Favrat, Pierre ; Deval, Philippe ; Declercq, Michel J.
Author_Institution
Electron. Lab., Fed. Inst. of Technol., Lausanne, Switzerland
Volume
33
Issue
3
fYear
1998
fDate
3/1/1998 12:00:00 AM
Firstpage
410
Lastpage
416
Abstract
A charge pump cell is used to make a voltage doubler using improved serial switches. A complete power efficiency theory is presented which fits the measurements. The importance of capacitors is shown with plots of power efficiency versus load and stray capacitors. Several problems arising at low voltage or high frequency are developed and some optimizations are presented. The substrate current is totally suppressed by the technique of bulk commutation. A power efficiency of 95% has been reached using external capacitors. A fully integrated charge pump is also presented and shows a maximum power efficiency of 75%
Keywords
CMOS analogue integrated circuits; DC-DC power convertors; commutation; voltage multipliers; 75 to 95 percent; CMOS voltage doubler; bulk commutation; charge pump cell; power efficiency theory; serial switches; stray capacitors; substrate current; Associate members; CMOS technology; Capacitors; Charge pumps; Circuits; Frequency; Low voltage; MOSFETs; Power measurement; Switches;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.661206
Filename
661206
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