Title :
Highly reliable 60/spl deg/C 50-mW operation of 650-nm band window-mirror laser diodes
Author :
Shima, A. ; Tada, H. ; Ono, K. ; Fujiwara, M. ; Utakouji, T. ; Kimura, T. ; Takemi, M. ; Higuchi, H.
Author_Institution :
Optoelectron. & Microwave Devices Lab., Mitsubishi Electr. Corp., Itami, Japan
fDate :
4/1/1997 12:00:00 AM
Abstract :
High-power GaInP QW laser diodes with a window-mirror-structure lasing at a wavelength of around 650 nm have been fabricated. The maximum light output power over 150 mW has been realized without optical mirror damage. In addition, the laser shows the fundamental-mode-operation at 50 mW and the dynamic characteristics sufficient for recordable digital versatile disc (DVD) applications. The lasers have been operating for 2000 h under the condition of CW, 50 mW, and 60/spl deg/C, for the first time.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser mirrors; laser modes; laser reliability; laser transitions; life testing; optical testing; quantum well lasers; semiconductor device reliability; semiconductor device testing; 150 mW; 2000 h; 50 mW; 60 C; 650 nm; CW lasers; GaInP; GaInP quantum well lasers; dynamic characteristics; fundamental-mode-operation; high-power laser diodes; highly reliable mW operation; maximum light output power; nm band window-mirror laser diodes; optical mirror damage; recordable digital versatile disc; window-mirror-structure lasing; Coatings; DVD; Diode lasers; Mirrors; Optical recording; Power generation; Semiconductor lasers; Temperature distribution; Threshold current; Zinc;
Journal_Title :
Photonics Technology Letters, IEEE
