Title :
Distributed feedback surface-emitting laser with air/semiconductor gratings embedded by mass-transport assisted wafer fusion technique
Author :
Imada, M. ; Noda, S. ; Sasaki, A. ; Kobayashi, H. ; Sasaki, G.
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan
fDate :
4/1/1997 12:00:00 AM
Abstract :
We report on a distributed feedback InGaAsP MQW laser with air/semiconductor gratings embedded by wafer-fusion technique with the assistance of mass-transport phenomenon for the first time. The air/semiconductor gratings with 0.4-μm period and 0.2-μm depth are successfully fabricated inside the device, and a single longitudinal mode oscillation at about 1.28 μm is demonstrated under pulsed condition at room temperature. The threshold current density is estimated to be about 1.4 kA/cm2. It is also shown that the device has a surface-emitting function since it has a low loss multiquantum-well waveguide with grating output coupler.
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser modes; laser transitions; optical couplers; optical fabrication; optical losses; quantum well lasers; semiconductor technology; surface emitting lasers; 0.2 mum; 0.4 mum; 1.28 mum; InGaAsP; InGaAsP MQW laser; air/semiconductor gratings; distributed feedback surface-emitting laser; grating output coupler; low loss multiquantum-well waveguide; mass-transport assisted wafer fusion technique; mass-transport phenomenon; pulsed condition; room temperature; single longitudinal mode oscillation; surface-emitting function; threshold current density; wafer-fusion technique; Distributed feedback devices; Gratings; Laser feedback; Laser fusion; Laser modes; Quantum well devices; Semiconductor lasers; Surface emitting lasers; Temperature; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
