Electrical and structural properties of nanotetrapod zinc oxide thin films prepared with different deposition temperature

Author

Azhar, N.E.A. ; Shariffudin, S.S. ; Affendi, I.H.H. ; Shafura, A.K. ; Saurdi, I. ; Ishak, A. ; Rusop, M.

Author_Institution

NANO-Electron. Centre (NET), Univ. Teknol. MARA, Shah Alam, Malaysia

fYear

2014

fDate

27-29 May 2014

Firstpage

188

Lastpage

192

Abstract

Nanotetrapod zinc oxide (ZnO) thin films have been deposited by thermal chemical vapor deposition (TCVD) technique. The films were deposited at 700°C and 800°C to study the temperature effect of physical properties of the nanotetrapod ZnO thin films. From XRD result shows the highest peak can observed from sample 700°C at (002) orientation. It was found that the size of nanotetrapod increased with increased of deposition temperature. The energy dispersive X-ray spectrometer (EDX) spectrum shows that the grown product contains zinc and oxygen only. At 800°C show the minimum of resistivity for the thin film which is 1.10 ohm. cm. Photoluminescence measurement shows a sharp peak ultraviolet emission at 380 nm and high intensity visible peak at 700°C because of defect due to oxygen vacancy and crystallization of ZnO nanotetrapod.

Keywords

II-VI semiconductors; X-ray chemical analysis; chemical vapour deposition; crystallisation; nanofabrication; nanostructured materials; photoluminescence; semiconductor growth; semiconductor thin films; vacancies (crystal); wide band gap semiconductors; zinc compounds; (002) orientation; EDX; TCVD; XRD; ZnO; crystallization; deposition temperature; electrical properties; energy dispersive X-ray spectrometer; nanotetrapod zinc oxide thin films; oxygen vacancy; photoluminescence; physical properties; resistivity; structural properties; temperature 700 degC; temperature 800 degC; temperature effect; thermal chemical vapor deposition; ultraviolet emission; Conductivity; Films; Temperature; Temperature measurement; X-ray diffraction; Zinc oxide; Nanotetrapod ZnO; Thermal-CVD; deposition temperature; electrical and structural properties;

fLanguage

English

Publisher

ieee

Conference_Titel

Technology Management and Emerging Technologies (ISTMET), 2014 International Symposium on

Conference_Location

Bandung

Print_ISBN

978-1-4799-3703-5

Type

conf

DOI

10.1109/ISTMET.2014.6936504

Filename

6936504