Title :
2.0-μm single-mode operation of InGaAs-InGaAsP distributed-feedback buried-heterostructure quantum-well lasers
Author :
Oishi, M. ; Yamamoto, M. ; Kasaya, K.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
4/1/1997 12:00:00 AM
Abstract :
Distributed-feedback (DFB) buried-heterostructure (BH) lasers with quantum-well active region emitting at 2.0 μm have been fabricated and characterized. The lasers with four wells showed performance of practical use: threshold current as low as 15 mA for 600-μm-long devices and CW single-mode output up to 5 mW at 2.03 μm under operation current of 100 mA were observed. The current- and temperature-tuning rates of DFB mode wavelength are 0.004 nm/mA and 0.125 nm/K, respectively.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; laser transitions; laser tuning; optical fabrication; quantum well lasers; 100 mA; 15 mA; 2.0 mum; 2.0-/spl mu/m single-mode operation; 2.03 mum; 5 mW; 600 mum; CW single-mode output; DFB BH lasers; DFB mode wavelength; InGaAs-InGaAsP; InGaAs-InGaAsP distributed-feedback buried-heterostructure quantum-well lasers; current-tuning rates; operation current; quantum-well active region; temperature-tuning rates; threshold current; Distributed feedback devices; Fiber lasers; Laser feedback; Laser modes; Optical waveguides; Quantum well lasers; Temperature; Threshold current; Waveguide lasers; Wet etching;
Journal_Title :
Photonics Technology Letters, IEEE
