• DocumentCode
    1341180
  • Title

    Backside optical emission diagnostics for excess IDDQ

  • Author

    Kash, J.A. ; Tsang, J.C. ; Rizzolo, Richard F. ; Patel, Atul K. ; Shore, Aaron D.

  • Author_Institution
    IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • Volume
    33
  • Issue
    3
  • fYear
    1998
  • fDate
    3/1/1998 12:00:00 AM
  • Firstpage
    508
  • Lastpage
    511
  • Abstract
    Backside optical emission was used to diagnose excess quiescent current in a multimillion gate microprocessor. Emission images showed the current was due to FETs improperly set in a conducting state. The utility of backside optical emission for IC diagnostics is discussed, and requirements for optical detectors and sample preparation are considered
  • Keywords
    failure analysis; fault diagnosis; fault location; infrared imaging; integrated circuit reliability; integrated circuit testing; luminescence; microprocessor chips; FET conducting state; IC diagnostics; backside optical emission diagnostics; emission images; excess IDDQ; excess quiescent current; multimillion gate microprocessor; optical detectors; sample preparation; CMOS logic circuits; Circuit faults; Circuit testing; Latches; Logic arrays; Logic testing; Microprocessors; Optical imaging; Stimulated emission; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.661218
  • Filename
    661218
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1341180