DocumentCode :
1341212
Title :
Dielectric Charging in Capacitive RF MEMS Switches: The Effect of Extended Durations of Electric Stress
Author :
Tavassolian, Negar ; Papaioannou, George ; Papapolymerou, John
Author_Institution :
Koch Inst. for Integrative Cancer Res., Massachusetts Inst. of Technol., Cambridge, MA, USA
Volume :
21
Issue :
11
fYear :
2011
Firstpage :
592
Lastpage :
594
Abstract :
By focusing on thermally-activated processes, a straight-forward and reliable method is devised to investigate dielectric charging effects in capacitive RF MEMS switches subjected to extended durations of electric stress. A general model of distributed charge and air gap is adopted and further developed for theoretical formulation. Experiments performed over a wide temperature range agree well with the theoretical model. It is shown that for extended stress periods, the algebraic sum of the pull-out voltages is thermally activated, and follows the same temperature trend as the voltage corresponding to the minimum capacitance of the switch. Since pull-out voltages can be measured accurately with little effort, this discovery significantly simplifies the study of thermally-activated processes in these switches. Finally, it is shown that charging increases with time, following a power-law relation.
Keywords :
air gaps; microswitches; air gap; algebraic sum; capacitive RF MEMS switches; dielectric charging effects; distributed charge; electric stress; extended stress periods; minimum capacitance; power-law relation; pull-out voltages; thermally-activated processes; Capacitance-voltage characteristics; Dielectrics; Microswitches; Radio frequency; Stress; Temperature measurement; Dielectric charging; electric stress; radio frequency (RF) micro-electromechanical system (MEMS) switches; silicon dioxide; thermally-activated processes;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2011.2169655
Filename :
6035743
Link To Document :
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