Title :
Fault Modeling and Worst-Case Test Vectors for Delay Failures Induced by Total Dose in ASICs
Author :
Abou-Auf, Ahmed A. ; Abdel-Aziz, Mostafa M. ; Abdel-Aziz, Hamzah A. ; Wassal, Amr G. ; Talkhan, Ihab E.
Author_Institution :
Dept. of Electron. Eng., American Univ. in Cairo, Cairo, Egypt
Abstract :
We analyzed the delay failure induced in standard-cell ASICs by total-ionizing dose. We developed a novel cell-level fault model for delay failures. We used this fault model to identify worst-case test vectors (WCTV) for delay failures induced in ASIC devices exposed to total ionizing dose. The fault model was experimentally validated using SPICE simulation and total dose data. We introduced a fast search algorithm based on directed graph and genetic algorithms to help identify WCTV for large ASICs within reasonable search time. The methodology was validated using ASIC test chip and Cobalt 60 facility.
Keywords :
CMOS integrated circuits; SPICE; application specific integrated circuits; directed graphs; dosimetry; embedded systems; failure analysis; fault simulation; genetic algorithms; integrated circuit testing; ASIC test chip; Cobalt 60 facility; SPICE simulation; WCTV; cell-level fault model; delay failure; delay failures; directed graph; genetic algorithms; search time; standard-cell ASIC; total dose data; total ionizing dose; total-ionizing dose; worst-case test vectors; Algorithm design and analysis; Application specific integrated circuits; CMOS technology; Failure analysis; Genetic algorithms; CMOS; delay failure; test vectors; total dose;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2224376