DocumentCode
1341258
Title
Photopumped antiguide blue lasers fabricated from molecular beam epitaxial ZnSe on GaAs
Author
Guan, Y. ; Zmudzinski, C.A. ; Zory, P.S. ; Park, R.M.
Author_Institution
Florida Univ., Gainesville, FL, USA
Volume
3
Issue
8
fYear
1991
Firstpage
685
Lastpage
687
Abstract
Room temperature photopumped laser oscillation at 469 nm has been achieved in ZnSe thin film leaky waveguide (antiguide) resonators with threshold pump intensities of about 350 kW/cm/sup 2/. The 1 mu m thick ZnSe was grown by molecular beam epitaxy on a
Keywords
II-VI semiconductors; laser transitions; molecular beam epitaxial growth; optical pumping; semiconductor growth; solid lasers; zinc compounds; 469 nm; GaAs; II-VI semiconductor; MBE; TE/sub 0/ optical mode loss; differential quantum efficiency; molecular beam epitaxial ZnSe; photopumped antiguide blue lasers; pump wavelength; room temperature photopumped laser oscillation; short-wavelength edge light emitting diodes; thin film leaky waveguide resonators; threshold pump intensities; Gallium arsenide; Laser excitation; Laser modes; Molecular beam epitaxial growth; Optical pumping; Optical resonators; Optical waveguides; Pump lasers; Waveguide lasers; Zinc compounds;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.84452
Filename
84452
Link To Document