DocumentCode :
1341271
Title :
Single Event Effects in Power MOSFETs Due to the Secondary Neutron Environment in a Proton Therapy Center
Author :
Cascio, Ethan W. ; Riley, Kent J. ; McCormack, Joe ; Flanagan, Rob
Author_Institution :
Francis H. Burr Proton Therapy Center, Massachusetts Gen. Hosp., Boston, MA, USA
Volume :
59
Issue :
6
fYear :
2012
Firstpage :
3154
Lastpage :
3159
Abstract :
Secondary neutron induced single event burnouts (SEB) in power MOSFETs to be installed in an X-ray generator located in a proton therapy treatment vault are characterized. This is done using both accelerated and in situ testing. Experimental techniques and schematics are presented that allow non-destructive testing of multiple MOSFETs in parallel for in situ real time measurements.
Keywords :
neutron effects; power MOSFET; radiation therapy; SEB; X-ray generator; experimental schematics; experimental techniques; in situ real time measurements; multiple MOSFET; nondestructive testing; power MOSFET; proton therapy center; proton therapy treatment vault; secondary neutron environment; secondary neutron induced single event burnouts; single event effects; Nondestructive testing; Power MOSFET; Protons; Radiation effects; Neutron radiation effects; power MOSFETs; protons; single event burnout;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2012.2221741
Filename :
6365390
Link To Document :
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